Description
- Transistors silicon KT828A analogue 2SC2121, 2SC2790, 2SC2791 USSR 2 pcs
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KT828A Silicon Transistors Switching mezaplanarnye npn structure. Designed for use in a secondary power supply, high voltage switching devices. The main technical characteristics of the transistor KT828A: The structure of the transistor: npn; Pk t max - Dissipated power collector with heat: 50 W; fgr - Cut-off frequency of the transistor current gain for the common-emitter: at least 4 MHz; Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter voltage: 800 V (0.01 ohms); Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; Ik max - Maximum DC Collector Current: 5 A; Ik and max - Maximum pulse collector current: 7.5 A; Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 5 mA (1400V); h21e - Static current transfer ratio of the transistor to the common-emitter: 2.25; Rke us - saturation resistance between the collector and emitter: no more than 0.66 ohms